Product Description

Silicon Carbide Kiln Shelves

Silicon nitride bonded silicon carbide(N-SiC)kiln shelves is excellent in performance of high strength, thermal conductivity, resistance of thermal shock, deformation, oxidization, and corrosion. It works well at high temperature within 1600℃.

It is widely used in fields of vitrified abrasives, high alumina products, medium alumina all, industrial furnace, electronic ceramics, high voltage porcelain, sanitary ware, houshold porcelain, nitride alloy, foamed ceramics, and so on.

 

Physical and chemical
SiC	≥72%
Si3N4	≥22%
Fe2O3	≤0.7%
Si	≤0.4%
Bulk Density	≥2.65g/cm3
Apparent Porosity	<16%
Compressive Strength r. t.	≥170MPa
Modulus of Rupture	≥45MPa(r. t.)
	≥50MPa(1400°C)
Thermal Conductivity	≥15w/m.k(1100°C)
Refractoriness	1800°C
Max Working Temperature	1550°C
Other specs can be supplied as clients' request.

 

Si3N4 bonded SiC is a new type of high-grade refractory materials. It includes radiant tube, brick, deformed parts and so on. These products, which have energy saving, environmental protection, high temperature resistance, corrosion resistance and other advantages, can be widely applied in the field of Urban construction, Kiln Furniture, Steel and non-ferrous mental, chemical construction materials, etc.

Si3N4 bonded SiC products with high strength in normal temperature. Under 1200-1400℃, it can keeps almost same strength and hardness with it under normal temperature. As the environment is different, the maximum service temperature can reached up to 1650-1750℃.

These products are obtained by reaction sintering of a mix of SiC with Si fines and additives and nitridation in N2 atmosphere at~1450℃

 

The following reaction would take place:

3Si+2N2→Si3N4

3Si+SiO2+2N2→2Si2N2O

Si3N4+SiO2→2Si2N2O

Si3N4  Si2N2O act as binder for the SiC grains

Contact

 

If you are interested in our product, just feel free to contact us.

 

Tel: 0086-136-33852636

Email: caec.sara@gmail.com

http://www.sicah.cn

Sales Manager: Sara Wang

Henan Si&C Co., Ltd

 

Payment Terms︰ TT/LC/DP/DA

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